Vision and Interest
The vision is to lead a transformative journey in materials science, establishing clear criteria to uncover the elusive mechanisms governing the Insulator-Metal transition, with a special focus on harnessing the potential of thin films. This endeavor aims to unlock a wealth of materials poised to revolutionize neuromorphic computing. Additionally, it involves developing advanced tools tailored to unraveling these complex mechanisms, thereby enhancing our understanding and capabilities in neuromorphic computing. By seamlessly blending theoretical insights with experimental finesse, this vision promises to usher in a new phase where materials innovation drives remarkable advancements, reshaping industries and propelling scientific progress. Current research focuses on strain engineering in Mott insulators like V2O3, where controlling substrate morphology can reverse strain states and manipulate phase transitions for applications in neuromorphic devices.
Research Areas
Thin films
Thin films are grown using various methods, including chemical vapor deposition (CVD), atomic layer deposition (ALD), and sputtering. CVD involves the chemical reaction of gaseous precursors to form a solid film on a substrate, allowing for high-quality coatings with uniform thickness. ALD provides precise control over film thickness by depositing atomic layers, making it suitable for nanoscale applications. Sputtering uses energetic particles to eject material from a target, which then deposits as a thin film.
Device fabrications
In neuromorphic devices, the focus is on creating hardware that simulates the functions of biological neural networks. This involves using materials like memristors and transistors to replicate synaptic and neuronal behavior. Key techniques include thin-film deposition and lithography, which enable the construction of nanoscale components that facilitate efficient information processing and learning, crucial for advancing artificial intelligence and brain-inspired computing.
2D materials
Two-dimensional layered materials, such as graphene and transition metal dichalcogenides (TMDs), consist of atomically thin sheets. Graphene is a single layer of carbon atoms arranged in a hexagonal lattice, characterized by high electrical conductivity, mechanical strength, and thermal conductivity. In contrast, TMDs are composed of transition metals and chalcogens, featuring distinct electronic properties, including tunable band gaps that can shift from indirect to direct depending on their thickness.
Publications & Papers
- 1. "Reversal of strain state in a Mott insulator thin film by controlling substrate morphology" - arXiv preprint arXiv:2510.02234. R. Singh, A. Rakshit, G. Atiya, M. Kalina, Y. Kauffmann, and Y. Kalcheim. abstract
- 2. "Atomic Layer Deposition of Crystalline β-NiS for Superior Sensing in Thin-Film Non-Enzymatic Electrochemical Glucose Sensors" - ACS Appl. Electron. Mater., 2021, 3, 1912. R. Singh* and M. M. Ayyub. abstract
- 3. "An Experimental Study of Carbon-Doped GaN via Solid-Gas Reaction Route and Investigation of Its Defect-Related Luminescence" - ACS Appl. Electron. Mater., 2022, 4, 3147. R. Singh, A. Roy, and C. N. R. Rao. abstract
- 4. "Dependence of the Properties of 2D Nanocomposites Generated by Covalent Crosslinking of Nanosheets on the Interlayer Separation: A Combined Experimental and Theoretical Study" - ChemPhysChem, 2019, 20, 1728. R. Singh, U. Gupta, V. S. Kumar, M. M. Ayyub, U. V. Waghmare, and C. N. R. Rao. abstract
- 5. "A new precursor route for the growth of NbO2 thin films by chemical vapor deposition" - Nanotechnology, 2023, 34, 145705. R. Singh, P. Chithaiah and C. N. R. Rao. abstract
- 6. "Metal–Insulator Transitions in Stable V2O3 Thin Films: Atomic Layer Deposition and Postdeposition Annealing Studies" - Phys. Status Solidi RRL, 2021, 15, 2000565. K. Manjunath, R. Singh, D. P. Panda, and C. N. R. Rao. abstract
- 7. "Hydrogen Generation by Solar Water Splitting Using 2D Nanomaterials" - Sol. RRL, 2020, 4, 2000050. M. M. Ayyub, R. Singh, and C. N. R. Rao. abstract
- 8. "Superlattices of Covalently Cross-linked 2D Materials for the Hydrogen Evolution Reaction" - APL Mater., 2020, 8, 020902. C. N. R. Rao, K. Pramoda, A. Saraswat, R. Singh, P. Vishnoi, N. Sagar, and A. Hezam. abstract
- 9. "Remarkable Photochemical HER Activity of Semiconducting 2H MoS2, C3N4–MoS2 Covalently Linked to Layers of 2D Structures and of the Stable Metallic 1T Phases Prepared Solvo- or Hydrothermally" - J. Chem. Sci., 2018, 130, 131. N. K. Singh, A. Soni, R. Singh, U. Gupta, K. Pramoda, and C. N. R. Rao. abstract
Ongoing Research
- • Strain engineering in Mott insulators for neuromorphic applications
- • Thin film deposition techniques for phase transition control
- • High-resolution microscopy for defect characterization
- • Metal-insulator transition mechanisms in correlated materials
- • Substrate morphology effects on film properties
Collaborations & Grants
- • Israel Institute of Technology (Technion) - Post-doctoral research on thin film materials (2024-present)
- • Technion funds - Funding for Mott insulator studies (Oct 2025-present)
- • International collaborations - Partnerships with universities on materials science research